vishay mmbd6050 document number 85735 rev. 1.3, 08-jul-04 vishay semiconductors www.vishay.com 1 12 3 16923 small signal switching diode features ? silicon epitaxial planar diode fast switching diode in case sot-23, especially suited for automatic insertion. mechanical data case: sot-23 plastic case weight: approx. 8.8 mg packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified 1) fr-5 = 1.0 x 0.75 x 0.062 in. 2) alumina = 0.4 x 0.3 x 0.024 in. 99.5 % alumina thermal characteristics t amb = 25 c, unless otherwise specified part ordering code marking remarks mmbd6050 mmBD6050-GS18 or mmbd6050-gs08 5am tape and reel parameter test condition symbol value unit continuous reverse voltage v r 70 v forward current i f 200 ma peak forward surge current i fsm 500 ma maximum power dissipation on fr-5 board 1) t a = 25 c p tot 225 mw derate above 25 c p tot 1.8 mw/c maximum power dissipation on alumina substrate 2) t a = 25 c p tot 300 mw derate above 25 c p tot 2.4 mw/c parameter test condition symbol value unit thermal resistance fr-5 r thja 556 c;/w junction to ambient alumina r thja 417 c/w maximum junction temperature t j 150 c storage temperature range t s - 55 to + 150 c
www.vishay.com 2 document number 85735 rev. 1.3, 08-jul-04 vishay mmbd6050 vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit reverse breakdown voltage i r = 100 av (br)r 70 v forward voltage i f = 1 ma v f 0.55 0.7 v i f = 100 ma v f 0.85 1.1 v reverse leakage current v r = 50 v i r 0.1 a reverse recovery time i f = i r = 10 ma, i rr = 1 ma t rr 4ns diode capacitance v r = 0 c tot 2.5 pf figure 1. dynamic forward resistance vs. forward current figure 2. admissible power dissipation vs. ambient temperature r - dynamic forward resistance ( ) f ? 10 100 1 1 100 10 18861 i f - forward current ( ma ) 200 18889 t amb - ambient temperature ( c) 500 400 300 200 100 20 40 60 80 100 120 140 160 180 0 0 p - admissible power dissipation ( mw ) tot iure 3dnamiorwardesistanesorwardcurrent iure 4elatiecapaitaneseerseoltae 18662 1 10 100 1000 10000 r - dynamic forward resistance ( ) f ? 110 0.1 0.01 100 i f - forward current ( ma ) =25 c t j f=1khz 18664 2468 0 1.1 1.0 0.9 0.8 0.7 10 c - relative capacitance ( pf ) tot v r - reverse voltag e(v) =25 c t j f=1mhz
vishay mmbd6050 document number 85735 rev. 1.3, 08-jul-04 vishay semiconductors www.vishay.com 3 figure 5. leakage current vs. junction temperature 18665 1 10 100 1000 10000 0 20 40 60 80 100 120 140 160 180 200 i - leakage current ( na ) r t j - junction temperature ( c) =20v v r 10 10 1 -1 100 10 1 0.1 /t t = 1/f =t pp i frm t p t t i =0 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 18666 i - admissible repetitive frm peak forward current ( a ) t p - pulse lengt h(s) figure 6.admissiblerepetitivepeakforwardcurrentvs.pulseuration
www.vishay.com 4 document number 85735 rev. 1.3, 08-jul-04 vishay mmbd6050 vishay semiconductors package dimensions in mm (inches) 2.0 (0.079) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) 0.52 (0.020) 1 2 3 17418 2.8 (.110) 3.1 (.122) 0.4 (.016) 0.95 (.037) 0.95 (.037) 0.1 (.004) max. 1.20(.047) 1.43 (.056) 0.4 (.016) 0.4 (.016) 0.098 (.005) 0.175 (.007) 0.95 (.037) 1.15 (.045) 2.35 (.092) 2.6 (.102) iso method e mounting pad layout
vishay mmbd6050 document number 85735 rev. 1.3, 08-jul-04 vishay semiconductors www.vishay.com 5 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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